Effect of the Number of Quantum-Dot Layers on the Performance of the 1.3 μm InAs/GaAs VCSELs

In this paper, we investigate the effect of the number of quantum-dot (QD) layers on the performance of the 1.3um QD-vertical-cavity surface-emitting lasers (QD- VeSELs). QD rate equations and thermal conduction equation is solved self-consistently to consider the effect of self-heating on the characteristics of the QD- VeSEL. Results demonstrate that a further increase in the number of QD layers leads to a decrease in self-heating of the laser which enhances the maximum achievable output power and 3-dB modulation bandwidth of the laser. It is also shown that with an increase in the number of QD layers, the roll-over of the optical power occurs at higher injection currents which leads to improve in the dynamic and static behavior of the laser.