肖特基势垒二极管和隧道晶体管的模拟

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) Pub Date : 1900-01-01 DOI:10.1109/IWCE.1998.742737

K. Matsuzawa, K. Uchida, A. Nishiyama

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引用次数: 4

摘要

我们提出了一个实用模型的实现和模拟结果，以涵盖肖特基和欧姆接触。该模型考虑了热离子发射和空间分布隧道效应。利用该模型的模拟再现了肖特基势垒二极管的特性，并显示了随着掺杂水平的增加，从肖特基势垒到欧姆势垒的转变。作为一个应用实例，证明了肖特基势垒隧道晶体管对短沟道效应的抗扰性。

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Simulations of Schottky barrier diodes and tunnel transistors

We present the implementation and simulated results of a practical model to cover Schottky and Ohmic contacts. The model considers thermionic emission and spatially distributed tunneling. Simulations using the present model reproduce characteristics of Schottky barrier diodes and show the transition from Schottky to ohmic as the doping level is increased. As an application example, the immunity of a Schottky barrier tunnel transistor to the short channel effect is demonstrated.

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来源期刊

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)

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