基于氧化铪的场效应管中单畴开关的证据:多电平场效应管存储单元的使能器

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-01 DOI:10.1109/IEDM.2015.7409777

H. Mulaosmanovic, S. Slesazeck, J. Ocker, M. Pešić, S. Muller, S. Flachowsky, J. Muller, P. Polakowski, J. Paul, S. Jansen, S. Kolodinski, C. Richter, S. Piontek, T. Schenk, A. Kersch, C. Kunneth, R. van Bentum, U. Schroder, T. Mikolajick

{"title":"基于氧化铪的场效应管中单畴开关的证据:多电平场效应管存储单元的使能器","authors":"H. Mulaosmanovic, S. Slesazeck, J. Ocker, M. Pešić, S. Muller, S. Flachowsky, J. Muller, P. Polakowski, J. Paul, S. Jansen, S. Kolodinski, C. Richter, S. Piontek, T. Schenk, A. Kersch, C. Kunneth, R. van Bentum, U. Schroder, T. Mikolajick","doi":"10.1109/IEDM.2015.7409777","DOIUrl":null,"url":null,"abstract":"Recent discovery of ferroelectricity in HfO2 thin films paved the way for demonstration of ultra-scaled 28 nm Ferroelectric FETs (FeFET) as non-volatile memory (NVM) cells [1]. However, such small devices are inevitably sensible to the granularity of the polycrystalline gate oxide film. Here we report for the first time the evidence of single ferroelectric (FE) domain switching in such scaled devices. These properties are sensed in terms of abrupt threshold voltage (VT) shifts leading to stable intermediate VT levels. We emphasize that this feature enables multi-level cell (MLC) FeFETs and gives a new perspective on steep subthreshold devices based on ferroelectric HfO2.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"94","resultStr":"{\"title\":\"Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells\",\"authors\":\"H. Mulaosmanovic, S. Slesazeck, J. Ocker, M. Pešić, S. Muller, S. Flachowsky, J. Muller, P. Polakowski, J. Paul, S. Jansen, S. Kolodinski, C. Richter, S. Piontek, T. Schenk, A. Kersch, C. Kunneth, R. van Bentum, U. Schroder, T. Mikolajick\",\"doi\":\"10.1109/IEDM.2015.7409777\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent discovery of ferroelectricity in HfO2 thin films paved the way for demonstration of ultra-scaled 28 nm Ferroelectric FETs (FeFET) as non-volatile memory (NVM) cells [1]. However, such small devices are inevitably sensible to the granularity of the polycrystalline gate oxide film. Here we report for the first time the evidence of single ferroelectric (FE) domain switching in such scaled devices. These properties are sensed in terms of abrupt threshold voltage (VT) shifts leading to stable intermediate VT levels. We emphasize that this feature enables multi-level cell (MLC) FeFETs and gives a new perspective on steep subthreshold devices based on ferroelectric HfO2.\",\"PeriodicalId\":336637,\"journal\":{\"name\":\"2015 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"94\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2015.7409777\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409777","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 94

摘要

最近在HfO2薄膜中发现的铁电性为超尺度28纳米铁电场效应管(FeFET)作为非易失性存储器(NVM)电池的演示铺平了道路[1]。然而，如此小的器件不可避免地对多晶栅氧化膜的粒度敏感。在这里，我们首次报道了单铁电(FE)畴开关在这种缩放器件中的证据。这些特性是根据阈值电压(VT)的突变来检测的，从而导致稳定的中间VT水平。我们强调，这一特性使多层次单元(MLC)场效应管成为可能，并为基于铁电HfO2的陡峭亚阈值器件提供了新的视角。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells

Recent discovery of ferroelectricity in HfO2 thin films paved the way for demonstration of ultra-scaled 28 nm Ferroelectric FETs (FeFET) as non-volatile memory (NVM) cells [1]. However, such small devices are inevitably sensible to the granularity of the polycrystalline gate oxide film. Here we report for the first time the evidence of single ferroelectric (FE) domain switching in such scaled devices. These properties are sensed in terms of abrupt threshold voltage (VT) shifts leading to stable intermediate VT levels. We emphasize that this feature enables multi-level cell (MLC) FeFETs and gives a new perspective on steep subthreshold devices based on ferroelectric HfO2.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2015 IEEE International Electron Devices Meeting (IEDM)

自引率

0.00%

发文量