利用声子蒙特卡罗模拟分析finfet的热传导特性

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI:10.1109/SISPAD.2014.6931552

Indra Nur Adisusilo, K. Kukita, Y. Kamakura

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引用次数: 5

摘要

利用蒙特卡罗方法，利用声子输运模拟器分析了FinFET结构的热传导特性。将模拟结果与基于傅立叶定律的传统热传导方程的模拟结果进行了比较，并讨论了弹道输运效应导致的差异。我们还分析了通过栅极接触的额外热路径的影响，并表明它具有不太显著但不可忽略的贡献，可以略微降低热点温度。

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Analysis of heat conduction property in FinFETs using phonon Monte Carlo simulation

A phonon transport simulator using a Monte Carlo method is used to analyze the heat conduction properties in FinFET structure. We compare the simulation results to those obtained from the conventional heat conduction equation based on the Fourier's law, and discuss about the discrepancies attributed to ballistic transport effect. We also analyze the impact of additional heat path through gate contact, and show that it has a less significant but non-negligible contribution which could slightly reduce the hot spot temperature.

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2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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