Laser performance comparison of long-wavelength strained InGaNAs and InGaAs QW laser diodes grown by AP-MOVPE

New InGa(N)As/GaAs structures have recently been presented as an interesting alternative to InP-based materials, due to the possibility of realising the 1.3 and 1.55 /spl mu/m lasers on a GaAs substrate, and to a strong electron confinement at the interfaces between the InGaNAs active layer and the AlGaAs or InGaP cladding layers. Improved thermal performance is thus expected from the InGaAsN-based lasers. In the work we present a comparative study of the laser characteristics of strain InGa(N)As/GaAs QWs structures grown on a GaAs substrate by atmospheric pressure. Dimethylhydrazine has been used as source of nitrogen for the growth, and the growth conditions (temperature, V/III flux ratio, ratio of DMHB in the gas phase) has been chosen to obtain a mirror like surface and maximum nitrogen incorporation.