硅片衬底制造中的层错和晶体缺陷研究

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI:10.1109/SMELEC.1998.781139

Y. Hua, S.L. Lim, L. An, Z.R. Guo, Y.K. Fan

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引用次数: 2

摘要

硅晶圆生产中存在的硅晶缺陷会影响良率。在本文中，使用155莱特蚀刻来确定硅晶体缺陷的根本原因。研究了几个低良率的案例，讨论了不同类型的晶体缺陷及其可能的根本原因和预防措施。

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Studies on stacking faults and crystalline defects in fabrication silicon wafer substrate

Silicon crystalline defects in production silicon wafers affect the yield. In this paper, the 155 Wright etch was used to identify the root causes of silicon crystalline defects. A few low yield cases are studied and the different types of crystalline defects and their possible root causes and preventative measures taken are discussed.

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ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)

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