Chengbo Gu, Kan Dong, Bo Liu, Yang Liu, Lijian Diao, Dongyi Meng
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引用次数: 2
摘要
本文分析了碳化硅(SiC) MOSFET的开关振铃机理,并在实验的基础上提出了一些抑制方法。在相腿结构中,SiC MOSFET可以在高开关频率和高温下工作,在这种情况下,SiC MOSFET面临的最大挑战是电磁干扰(EMI)。为了充分发挥SiC MOSFET的潜力,尽可能地抑制开关振铃,本文研究了开关振铃产生的原因,并提出了一些抑制方法。常用的抑制方法包括增加栅极驱动电阻、栅极源并联电容和栅极反向关断电压。基于CREE CAS300M12BM2 SiC mosfet的实验结果表明,该抑制方法能有效抑制开关振铃。
Switching Ringing Suppression of SiC MOSFET in a Phase-Leg Configuration
EEE This paper analyses the switching ringing mechanism of Silicon Carbide (SiC) MOSFET and proposes some suppression methods based on experiments. In a phase-leg configuration, the SiC MOSFET can be operated under high switching frequency and high temperature with high voltage and current, in which case, the biggest challenge for SiC MOSFET is the electromagnetic interference (EMI). To utilize the full potential of SiC MOSFET and suppress the switching ringing as much as possible, this paper investigates the causes of switching ringing and proposes some suppression methods. Common suppression methods include increasing gate drive resistance, gate source shunt capacitance, and gate reverse turn-off voltage. Based on CREE CAS300M12BM2 SiC MOSFETs, the experimental results show that the suppression methods are effective to suppress switching ringing.