用改进的拉伸指数方程估计不同偏置温度应力下a-IGZO TFTs的阈值电压位移

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI:10.1109/AM-FPD.2016.7543647

Xin Ju, Xiang Xiao, Yuxiang Xiao, Shengdong Zhang

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引用次数: 2

摘要

在这项工作中，我们研究了非晶IGZO (a-IGZO) tft的阈值电压(Vth)移位退化。tft采用底栅交错结构，并具有腐蚀停止层。对已知的第v次位移拉伸指数方程进行了改进，并给出了一种系统的提取方法。在不同的栅极偏置应力和温度下，定量地估计了a-IGZO TFTs的Vth位移。计算结果与实测数据吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Estimation of threshold voltage shift in a-IGZO TFTs under different bias temperature stress by improved stretched-exponential equation

In this work, we study threshold voltage (Vth) shift degradation in amorphous IGZO (a-IGZO) TFTs. The TFTs employ the bottom-gate staggered structure with an etch stopped layer. An improvement is presented to well known stretched-exponential equation for the Vth shift, and a systematic extraction method is provided. The Vth shift in a-IGZO TFTs is estimated quantitatively under different gate bias stress and temperature. Good agreements are obtained between calculated results and measured data.

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2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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