{"title":"商业智能的知识","authors":"C. Holsapple","doi":"10.2498/iti.2012.0484","DOIUrl":null,"url":null,"abstract":"Summary form only given. Charge pumping (CP) is a well-known technique for electrical characterization of semiconductor-insulator interface traps. It has been proposed more than four decades ago and applies primarily to MOSFETs as it requires the switching of the device between inversion and accumulation. Until now, it has therefore been mainly used to study the Si-SiO 2 system and accompanied MOSFET scaling.","PeriodicalId":261302,"journal":{"name":"International Conference on Information Technology Interfaces","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The knowledge of business intelligence\",\"authors\":\"C. Holsapple\",\"doi\":\"10.2498/iti.2012.0484\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. Charge pumping (CP) is a well-known technique for electrical characterization of semiconductor-insulator interface traps. It has been proposed more than four decades ago and applies primarily to MOSFETs as it requires the switching of the device between inversion and accumulation. Until now, it has therefore been mainly used to study the Si-SiO 2 system and accompanied MOSFET scaling.\",\"PeriodicalId\":261302,\"journal\":{\"name\":\"International Conference on Information Technology Interfaces\",\"volume\":\"94 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Information Technology Interfaces\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.2498/iti.2012.0484\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Information Technology Interfaces","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2498/iti.2012.0484","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Summary form only given. Charge pumping (CP) is a well-known technique for electrical characterization of semiconductor-insulator interface traps. It has been proposed more than four decades ago and applies primarily to MOSFETs as it requires the switching of the device between inversion and accumulation. Until now, it has therefore been mainly used to study the Si-SiO 2 system and accompanied MOSFET scaling.
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