{"title":"等离子体波电子器件","authors":"V. Ryzhii, M. Shur","doi":"10.1109/ISDRS.2003.1272060","DOIUrl":null,"url":null,"abstract":"In deep submicron field effect transistors, the velocity of the surface plasma waves is more than an order of magnitude higher that the electron drift velocity and, therefore, excitation, propagation and generation of these waves should allow for operation at terahertz frequencies. In the plasma wave excitation regime, deep submicron transistors with high electron mobility could be used as tunable resonant detectors of terahertz radiation.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"4 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Plasma wave electronics devices\",\"authors\":\"V. Ryzhii, M. Shur\",\"doi\":\"10.1109/ISDRS.2003.1272060\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In deep submicron field effect transistors, the velocity of the surface plasma waves is more than an order of magnitude higher that the electron drift velocity and, therefore, excitation, propagation and generation of these waves should allow for operation at terahertz frequencies. In the plasma wave excitation regime, deep submicron transistors with high electron mobility could be used as tunable resonant detectors of terahertz radiation.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"4 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272060\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272060","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In deep submicron field effect transistors, the velocity of the surface plasma waves is more than an order of magnitude higher that the electron drift velocity and, therefore, excitation, propagation and generation of these waves should allow for operation at terahertz frequencies. In the plasma wave excitation regime, deep submicron transistors with high electron mobility could be used as tunable resonant detectors of terahertz radiation.