等离子体波电子器件

V. Ryzhii, M. Shur
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引用次数: 8

摘要

在深亚微米场效应晶体管中,表面等离子体波的速度比电子漂移速度高一个数量级以上,因此,这些波的激发、传播和产生应该允许在太赫兹频率下工作。在等离子体波激发下,具有高电子迁移率的深亚微米晶体管可以用作太赫兹辐射的可调谐共振探测器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Plasma wave electronics devices
In deep submicron field effect transistors, the velocity of the surface plasma waves is more than an order of magnitude higher that the electron drift velocity and, therefore, excitation, propagation and generation of these waves should allow for operation at terahertz frequencies. In the plasma wave excitation regime, deep submicron transistors with high electron mobility could be used as tunable resonant detectors of terahertz radiation.
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