A 0.2-2 GHz Time-Interleaved Multi-Stage Switched-Capacitor Delay Element Achieving 448.6 ns Delay and 330 ns/mm2 Area Efficiency

A 0.2-2 GHz digitally programmable RF delay element based on a time-interleaved multi-stage switched-capacitor (TIMS-SC) approach is presented. The proposed approach enables hundreds of ns of broadband RF delay by employing sample time expansion in multiple stages of switched-capacitor storage elements. The delay element was implemented in a 45 nm SOI CMOS process and achieves a 2.55-448.6 ns programmable delay range with $< 0.12\ \ \%$ delay variation across 1.8 GHz of bandwidth at maximum delay, 2.42 ns programmable delay steps, and 330 ns/mm2 area efficiency. The device achieves 24 dB gain, 7.1 dB noise figure, and consumes 80 mW from a 1 V supply with an active area of 1.36 mm2.