高频开关SiC Mosfet栅极驱动器的实验结果

2022 14th International Conference on Information Technology and Electrical Engineering (ICITEE) Pub Date : 2022-10-18 DOI:10.1109/ICITEE56407.2022.9954115

Agta Wijaya Kurniawan, E. Firmansyah, F. D. Wijaya

{"title":"高频开关SiC Mosfet栅极驱动器的实验结果","authors":"Agta Wijaya Kurniawan, E. Firmansyah, F. D. Wijaya","doi":"10.1109/ICITEE56407.2022.9954115","DOIUrl":null,"url":null,"abstract":"DC-DC converter battery charger application commonly applied a high-frequency switching method. The high-frequency technique aims for a smaller size transformer size and weight. Overall, the chosen strategy leads to more economical end-product. The SiC-MOSFET becomes an additional solution to achieve high power and high frequency application applications. This paper focused on the design of the gate driver for SiC-MOSFET that can be applied in many applications including battery charger and inverter applications. The result showed that the gate driver designed had successfully switched SiC-MOSFET up to 35 kHz.","PeriodicalId":246279,"journal":{"name":"2022 14th International Conference on Information Technology and Electrical Engineering (ICITEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Experiment Result of High Frequency Switching SiC Mosfet Gate Driver\",\"authors\":\"Agta Wijaya Kurniawan, E. Firmansyah, F. D. Wijaya\",\"doi\":\"10.1109/ICITEE56407.2022.9954115\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"DC-DC converter battery charger application commonly applied a high-frequency switching method. The high-frequency technique aims for a smaller size transformer size and weight. Overall, the chosen strategy leads to more economical end-product. The SiC-MOSFET becomes an additional solution to achieve high power and high frequency application applications. This paper focused on the design of the gate driver for SiC-MOSFET that can be applied in many applications including battery charger and inverter applications. The result showed that the gate driver designed had successfully switched SiC-MOSFET up to 35 kHz.\",\"PeriodicalId\":246279,\"journal\":{\"name\":\"2022 14th International Conference on Information Technology and Electrical Engineering (ICITEE)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 14th International Conference on Information Technology and Electrical Engineering (ICITEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICITEE56407.2022.9954115\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 14th International Conference on Information Technology and Electrical Engineering (ICITEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICITEE56407.2022.9954115","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

电池充电器应用中常用的DC-DC变换器是一种高频开关方法。高频技术的目标是缩小变压器的尺寸和重量。总的来说，选择的策略会导致更经济的最终产品。SiC-MOSFET成为实现高功率和高频应用的另一种解决方案。本文重点研究了可用于电池充电器和逆变器等多种应用的硅基mosfet栅极驱动器的设计。结果表明，所设计的栅极驱动器已成功地将SiC-MOSFET切换至35 kHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Experiment Result of High Frequency Switching SiC Mosfet Gate Driver

DC-DC converter battery charger application commonly applied a high-frequency switching method. The high-frequency technique aims for a smaller size transformer size and weight. Overall, the chosen strategy leads to more economical end-product. The SiC-MOSFET becomes an additional solution to achieve high power and high frequency application applications. This paper focused on the design of the gate driver for SiC-MOSFET that can be applied in many applications including battery charger and inverter applications. The result showed that the gate driver designed had successfully switched SiC-MOSFET up to 35 kHz.

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2022 14th International Conference on Information Technology and Electrical Engineering (ICITEE)

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