采用伪晶HEMT工艺的60ghz通信系统单片电路

IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1992-06-01 DOI:10.1109/MCS.1992.185999

P. Gamand, P. Suchet, M. Iost, M. Pertus, A. Collet, J. Bellaiche, P. Rolland, N. Haeze

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引用次数: 2

摘要

采用0.25 μ m伪晶高电子迁移率晶体管(HEMT)工艺设计并制作了宽带阻像混频器和高实际效率放大器。混合器，集成在0.6毫米/sup 2/，包括一个同相功率分离器。在52 ~ 60 GHz范围内，其图像抑制性能优于30 dB，包括功率分配器在内的转换损耗为14 dB。结合两个0.3 mm/sup 2/ IF单片放大器，该混频器在0.5至3 GHz范围内表现出8至9 dB的转换增益。该放大器工作在62-63 GHz范围内，增益密度优于8 dB/mm/sup 2/，输入/输出I/O驻波比(VSWR)为2.5。

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Monolithic circuits for 60 GHz communication systems using pseudomorphic HEMT process

A wideband image rejection mixer and a high real estate efficiency amplifier were designed and fabricated with a 0.25- mu m pseudomorphic high-electron-mobility-transistor (HEMT) process. The mixer, integrated on 0.6 mm/sup 2/, included an in-phase power splitter. It exhibited better than 30 dB of image rejection from 52 to 60 GHz with 14 dB of conversion loss including the power splitter. Combined with two 0.3-mm/sup 2/ IF monolithic amplifiers, the mixer exhibited 8 to 9 dB of conversion gain from 0.5 to 3 GHz. The amplifier, operating around 62-63 GHz, exhibited better than 8 dB/mm/sup 2/ gain density, with an input/output I/O voltage standing-wave ratio (VSWR) of 2.5.<>

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来源期刊

IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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