用于c波段应用的低噪声PHEMT及其MMIC LNA实现

ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364) Pub Date : 2000-09-14 DOI:10.1109/ICMMT.2000.895619

B.G. Choi, Y.S. Lee, K. Yoon, H. Seo, C. Park

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引用次数: 12

摘要

我们采用0.25 /spl mu/m门长AlGaAs-InGaAs-GaAs伪晶高电子迁移率晶体管，设计并制造了用于6 GHz频段应用的MMIC低噪声放大器。两级LNA设计用于满足高数据速率c波段无线局域网、DSRC和多用途ISM波段应用的噪声要求。输入级通过调整栅极宽度和源端的串联反馈电感来提供同时的噪声和阻抗匹配，级间和输出级匹配到50 /spl ω /。片上匹配的LNA在6ghz范围内噪声系数小于0.88 dB，增益大于16 dB，回波损耗小于-10 dB。

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Low noise PHEMT and its MMIC LNA implementation for C-band applications

We have designed and fabricated an MMIC low noise amplifier for 6 GHz band applications using 0.25 /spl mu/m gate length AlGaAs-InGaAs-GaAs pseudomorphic high electron mobility transistors. The two-stage LNA is designed to meet the noise requirements for high data rate C-band wireless LAN, DSRC, and multi-purpose ISM band applications. The input stage was designed to provide a simultaneous noise and impedance match by adjusting both gate width and series feedback inductance at the source, and the inter-stage and the output stage were matched to 50 /spl Omega/. The on-chip matched LNA shows noise figure less than 0.88 dB, gain greater than 16 dB, and return loss less than -10 dB at 6 GHz range.

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来源期刊

ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364)

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