激光退火LT多晶硅tft的光谱分析

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-17 DOI:10.1109/ASID.1999.762722

Chu-Jung Shih, I. Lu, Li-Ming Wang

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引用次数: 0

摘要

本文研究了XeCl准分子激光退火(ELA)非晶硅的光学特性。在厚度为300 nm的PECVD氧化物上沉积了50 nm的PECVD a- si薄膜。然后在308 nm宽范围的XeCl准分子激光能量密度下对样品进行加热以降低其氢含量并结晶。研究发现，多晶硅薄膜的结构和光学特性是多晶硅薄膜结晶程度的函数。例如，在420 ~ 610 nm的透光光谱范围内，透光率取决于多晶硅薄膜的结晶程度。因此，我们可以利用多晶硅薄膜的这些光学特性来监测多晶硅薄膜的结晶程度。讨论了激光结晶多晶硅的光学特性、ELA能量密度和表面粗糙度之间的关系，以监测多晶硅薄膜的质量。

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Spectroscopic analysis in laser annealing LT poly-Si TFTs

We investigated the optic characteristics of XeCl excimer laser annealed (ELA) amorphous silicon in this study. The 50 nm PECVD a-Si film was deposited on PECVD oxide with a thickness of 300 nm. Then the samples were heated to reduce its hydrogen content and crystallized with a wide range of 308 nm XeCl excimer laser energy densities. It was found that the structure and optic characteristics of Poly-Si film is a function of the extent of crystalline of Poly-Si film. For example, in the transmittance spectroscopic range of 420-610 nm, the transmittance is dependent on the extent of crystalline of Poly-Si film. Therefore we can use these optic characteristics of Poly-Si film to monitor the extent of crystallization of Poly-Si films. Correlations between optic characteristics of laser crystallized Poly-Si, ELA energy density and surface roughness were discussed to monitor the Poly-Si film quality.

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Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)

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