{"title":"简单溶液蒸发法制备单壁碳纳米管薄膜太阳能微电池","authors":"C. C. Chen, Yiyang Chang, Jimeng Zhang","doi":"10.1109/NEMS.2012.6196829","DOIUrl":null,"url":null,"abstract":"This paper reports a solar microcell based on single-walled carbon nanotubes (SWNTs) thin film-silicon heterojunction prepared by very simple and low cost solution-evaporation (SE) method. The nano-material of SWNTs, which has a one-dimensional structure and direct band gap with unique electric properties, is applied and plays the role of the energy conversion in the solar microcells, including exciton generation, carrier collection and transportation. The intrinsic p-SWNTs film was deposited conformally on the n-type silicon substrate to form the p-n heterojunction by SE method. Under 100mA/cm2 illumination, the SWNTs thin film microcell shows the open voltage (Voc) of 230mV, short circuit current density (Jsc) of 73.7μA/cm2, and fill factor (FF) of about 19%, proving that SE method is promising for achieving SWNTs thin film for application in microdevices.","PeriodicalId":156839,"journal":{"name":"2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A SWNTs thin film solar microcell prepared by simple solution-evaporation method\",\"authors\":\"C. C. Chen, Yiyang Chang, Jimeng Zhang\",\"doi\":\"10.1109/NEMS.2012.6196829\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports a solar microcell based on single-walled carbon nanotubes (SWNTs) thin film-silicon heterojunction prepared by very simple and low cost solution-evaporation (SE) method. The nano-material of SWNTs, which has a one-dimensional structure and direct band gap with unique electric properties, is applied and plays the role of the energy conversion in the solar microcells, including exciton generation, carrier collection and transportation. The intrinsic p-SWNTs film was deposited conformally on the n-type silicon substrate to form the p-n heterojunction by SE method. Under 100mA/cm2 illumination, the SWNTs thin film microcell shows the open voltage (Voc) of 230mV, short circuit current density (Jsc) of 73.7μA/cm2, and fill factor (FF) of about 19%, proving that SE method is promising for achieving SWNTs thin film for application in microdevices.\",\"PeriodicalId\":156839,\"journal\":{\"name\":\"2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEMS.2012.6196829\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMS.2012.6196829","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A SWNTs thin film solar microcell prepared by simple solution-evaporation method
This paper reports a solar microcell based on single-walled carbon nanotubes (SWNTs) thin film-silicon heterojunction prepared by very simple and low cost solution-evaporation (SE) method. The nano-material of SWNTs, which has a one-dimensional structure and direct band gap with unique electric properties, is applied and plays the role of the energy conversion in the solar microcells, including exciton generation, carrier collection and transportation. The intrinsic p-SWNTs film was deposited conformally on the n-type silicon substrate to form the p-n heterojunction by SE method. Under 100mA/cm2 illumination, the SWNTs thin film microcell shows the open voltage (Voc) of 230mV, short circuit current density (Jsc) of 73.7μA/cm2, and fill factor (FF) of about 19%, proving that SE method is promising for achieving SWNTs thin film for application in microdevices.