通过 MOCVD 生长的高电阻未掺杂 Al/sub 0.48/In/sub 0.52/As 层

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328170

S. Ochi, T. Kimura, T. Ishida, T. Sonoda, S. Takamiya, S. Mitsui

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引用次数: 0

摘要

研究表明，未掺杂 MOCVD Al/sub 0.48/In/sub 0.52/As 层的电阻率和传导类型与生长温度（450/spl deg/C-650/spl deg/C）密切相关。随着生长温度的降低，传导类型从 n 型、半绝缘型变为 p 型。在 500/spl deg/C 下生长的未掺杂 Al/sub 0.48/In/sub 0.52/As 层成功获得了超过 2/spl times/10/sup 8/ /spl Omega/-cm 的高电阻率。在 SIMS 和 ICTS 的帮助下，我们发现电阻率在很大程度上取决于碳的掺入，而碳的掺入率与生长温度密切相关。掺入的碳补偿了原生深供体。即使在 500/spl deg/C 的低生长温度下，也能实现未掺杂 Al/sub 0.48/In/sub 0.52/As 层的良好选择性生长。

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High resistive undoped Al/sub 0.48/In/sub 0.52/As layers grown by MOCVD

It is shown that the resistivity and the conduction type of undoped MOCVD Al/sub 0.48/In/sub 0.52/As layers depend strongly on the growth temperature (450/spl deg/C-650/spl deg/C). The conduction type changes from n-type, semi-insulating and p-type with the decrease of the growth temperature. High resistivity over 2/spl times/10/sup 8/ /spl Omega/-cm is successfully obtained from undoped Al/sub 0.48/In/sub 0.52/As layers grown at 500/spl deg/C. With help of SIMS and ICTS, it is found that the resistivity is substantially determined by the incorporation of carbon whose incorporation rate depends strongly on the growth temperature. The incorporated carbon compensates the native deep donors. The good selective growth of undoped Al/sub 0.48/In/sub 0.52/As layers is also achieved at even low growth temperature of 500/spl deg/C.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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