{"title":"用MEMS作动器测定SCS纳米梁拉伸过程中的晶格参数","authors":"H. Zeng, Tie Li, Q. Jin, Yuelin Wang, Fangfang Xu","doi":"10.1109/ISAM.2011.5942299","DOIUrl":null,"url":null,"abstract":"We present a novel experimental method for observing the lattice behavior of single crystal silicon (SCS) nanobeam in process of tensile testing. A TEM in-situ nanobeam tensile testing device has been fabricated and the lattice parameters of SCS nanobeam of different tensile stress have been measured using selected-area electron diffraction (SAED). The results suggest that the trends of the lattice parameters consists with the increasing tensile stress in the SCS nanobeam, and a certain degree of distortion of lattice and movements of crystal dislocations could happen during SCS nanobeam tensile testing.","PeriodicalId":273573,"journal":{"name":"2011 IEEE International Symposium on Assembly and Manufacturing (ISAM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Determination of lattice parameters of SCS nanobeam in process of tensile test using MEMS actuator\",\"authors\":\"H. Zeng, Tie Li, Q. Jin, Yuelin Wang, Fangfang Xu\",\"doi\":\"10.1109/ISAM.2011.5942299\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a novel experimental method for observing the lattice behavior of single crystal silicon (SCS) nanobeam in process of tensile testing. A TEM in-situ nanobeam tensile testing device has been fabricated and the lattice parameters of SCS nanobeam of different tensile stress have been measured using selected-area electron diffraction (SAED). The results suggest that the trends of the lattice parameters consists with the increasing tensile stress in the SCS nanobeam, and a certain degree of distortion of lattice and movements of crystal dislocations could happen during SCS nanobeam tensile testing.\",\"PeriodicalId\":273573,\"journal\":{\"name\":\"2011 IEEE International Symposium on Assembly and Manufacturing (ISAM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International Symposium on Assembly and Manufacturing (ISAM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAM.2011.5942299\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Symposium on Assembly and Manufacturing (ISAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAM.2011.5942299","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Determination of lattice parameters of SCS nanobeam in process of tensile test using MEMS actuator
We present a novel experimental method for observing the lattice behavior of single crystal silicon (SCS) nanobeam in process of tensile testing. A TEM in-situ nanobeam tensile testing device has been fabricated and the lattice parameters of SCS nanobeam of different tensile stress have been measured using selected-area electron diffraction (SAED). The results suggest that the trends of the lattice parameters consists with the increasing tensile stress in the SCS nanobeam, and a certain degree of distortion of lattice and movements of crystal dislocations could happen during SCS nanobeam tensile testing.
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