D. Grutzmacher, J. Hergeth, M. Glade, K. Wolter, F. Reinhardt, F. Fidorra, P. Wolfram, P. Balk
{"title":"LP-MOVPE控制GaInAs/InP MQW和GaInAsP/GaInAs分离约束MQW激光结构的生长","authors":"D. Grutzmacher, J. Hergeth, M. Glade, K. Wolter, F. Reinhardt, F. Fidorra, P. Wolfram, P. Balk","doi":"10.1109/ICIPRM.1990.203030","DOIUrl":null,"url":null,"abstract":"Using a low-pressure MOVPE growth process for GaInAs/InP and GaInAs/GaInAsP multiple-quantum-well (MQW) lasers, stringent requirements for interface abruptness and the diffusion of the p-type dopant, among others, were met. In the optimized growth process the well width is controlled in fractions of one monolayer and the diffusion coefficient of Zn is reduced to 6.5*10/sup -14/ cm/sup 2//s. Failure to improve the laser characteristics by replacing the GaInAsP active layer by a GaInAs/InP MQW is caused by inefficient heavy hole injection across the InP barriers. For lasers containing four GaInAs wells, threshold current density as low as 0.61 kA/cm/sup 2/ (L=800 mu m) was observed.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Controlled growth of GaInAs/InP MQW and GaInAsP/GaInAs separate confinement MQW laser structures by LP-MOVPE\",\"authors\":\"D. Grutzmacher, J. Hergeth, M. Glade, K. Wolter, F. Reinhardt, F. Fidorra, P. Wolfram, P. Balk\",\"doi\":\"10.1109/ICIPRM.1990.203030\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using a low-pressure MOVPE growth process for GaInAs/InP and GaInAs/GaInAsP multiple-quantum-well (MQW) lasers, stringent requirements for interface abruptness and the diffusion of the p-type dopant, among others, were met. In the optimized growth process the well width is controlled in fractions of one monolayer and the diffusion coefficient of Zn is reduced to 6.5*10/sup -14/ cm/sup 2//s. Failure to improve the laser characteristics by replacing the GaInAsP active layer by a GaInAs/InP MQW is caused by inefficient heavy hole injection across the InP barriers. For lasers containing four GaInAs wells, threshold current density as low as 0.61 kA/cm/sup 2/ (L=800 mu m) was observed.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.203030\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203030","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Controlled growth of GaInAs/InP MQW and GaInAsP/GaInAs separate confinement MQW laser structures by LP-MOVPE
Using a low-pressure MOVPE growth process for GaInAs/InP and GaInAs/GaInAsP multiple-quantum-well (MQW) lasers, stringent requirements for interface abruptness and the diffusion of the p-type dopant, among others, were met. In the optimized growth process the well width is controlled in fractions of one monolayer and the diffusion coefficient of Zn is reduced to 6.5*10/sup -14/ cm/sup 2//s. Failure to improve the laser characteristics by replacing the GaInAsP active layer by a GaInAs/InP MQW is caused by inefficient heavy hole injection across the InP barriers. For lasers containing four GaInAs wells, threshold current density as low as 0.61 kA/cm/sup 2/ (L=800 mu m) was observed.<>
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