基于BSIM4系列MOSFET和CNTFET的2.65GHz无线系统低噪声放大器设计案例研究

2014 First International Conference on Automation, Control, Energy and Systems (ACES) Pub Date : 2014-05-01 DOI:10.1109/ACES.2014.6807985

Sayak Bhowal

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引用次数: 1

摘要

高频无线应用的低功耗LNA设计是当前超大规模集成电路中具有挑战性的任务之一。放大器噪声的主要组成部分是闪烁噪声和热噪声。本文主要研究了单端LNA在BSIM4系列的130nm和22nm模型和Verilog基于CNTFET的平台上的对比研究。以LNA的机鼻图、反射系数和增益为比较对象。

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A case study of low-noise amplifier design for 2.65GHz wireless system using MOSFET BSIM4 series and CNTFET

Low power LNA design for high frequency wireless application is one of the challenging tasks in present scenario of VLSI. The major components of noise in amplifier are incorporated into flicker noise and thermal noise. In this paper the main concentration is given on a comparative study for a single ended LNA in the platform of 130nm to 22nm models of BSIM4 series and Verilog based CNTFET. Nose figure, reflection coefficients and gain of LNA are taken as a subject of matter for the comparison.

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2014 First International Conference on Automation, Control, Energy and Systems (ACES)

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