InGaAs/InP双异质结构双极晶体管中SiNx钝化增加电流增益

2015 IEEE International Conference on Communication Problem-Solving (ICCP) Pub Date : 2015-10-01 DOI:10.1109/ICCPS.2015.7454176

Jun-Ling Xie, Wei Cheng, Y. Wang, B. Niu, Long Chang, Tangsheng Chen

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引用次数: 0

摘要

研究了室温SiNx沉积下InGaAs/InP双异质结构双极晶体管(dhbt)的钝化。由于减少了SiNx沉积过程中的表面损伤，在低偏置电压区可以观察到电流增益的提高。根据我们的分析，钝化后基极-发射极结处与表面复合相关的电流分量急剧下降，这对提高器件的可靠性至关重要。

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Current gain increase by SiNx passivation in InGaAs/InP double heterostructure bipolar transistors

Passivation of InGaAs/InP double heterostructure bipolar transistors (DHBTs) with room temperature SiNx deposition was investigated. Due to reduction of surface damages during SiNx deposition, current gain improvement was observed at low bias voltage region. According to our analysis, a drastic decrease of surface recombination related current component at base-emitter junction occurred after passivation, which is crucial for improving the device reliability.

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2015 IEEE International Conference on Communication Problem-Solving (ICCP)

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