利用低压环形振荡器监测质子束诱导的光电二极管退化

H. Neitzert, G. Landi, F. Lang, J. Bundesmann, A. Denker, S. Keil, R. Thewes
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引用次数: 0

摘要

研究了高能质子辐照对硅光电二极管性能的影响,将两个发光器件串联起来作为环形振荡器的电源,该振荡器采用市售CMOS NAND门实现,并监测输出频率。为了考虑单个太阳能电池的退化问题,采用标准CMOS工艺制作了一个19级环形振荡器。该电路提供集成分频器和输出缓冲器,并且光电二极管提供的电源电压低至300mV时获得稳定的电压-频率转换。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Monitoring Proton Beam-induced Photodiode Degradation using Low-voltage Ring Oscillators
The influence of high energy Proton irradiation on the performance of Silicon photodiodes is investigated using two illuminated devices connected in series as power supply of a ring-oscillator realized with commercially available CMOS NAND gates and monitoring the output frequency. In order to consider the degradation of a single solar cell a 19-stage ring-oscillator fabricated in a standard CMOS process is operated. The circuit provides an integrated frequency divider and an output buffer, and stable voltage-to-frequency conversion is obtained for supply voltages provided by the photodiode down to 300mV.
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