在厚埋氧化物SOI上采用新设计的600v横向IGBT的0.8 /spl mu/m高压集成电路

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509469

K. Watabe, H. Akiyama, T. Terashima, S. Nobuto, M. Yamawaki, T. Hirao

{"title":"在厚埋氧化物SOI上采用新设计的600v横向IGBT的0.8 /spl mu/m高压集成电路","authors":"K. Watabe, H. Akiyama, T. Terashima, S. Nobuto, M. Yamawaki, T. Hirao","doi":"10.1109/ISPSD.1996.509469","DOIUrl":null,"url":null,"abstract":"We have demonstrated that the developed process has a breakdown voltage of higher than 600 V with use of thick buried-oxide and thin SOI. From both experiments and simulations, the cylindrical structure in the LIGBTs shows the best performance; it improves the latch-up tolerance without the increase of on-state voltage. Moreover, the process we have developed is completely compatible with an existing 5 V, 0.8 /spl mu/m CMOS process.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 0.8 /spl mu/m high voltage IC using newly designed 600 V lateral IGBT on thick buried-oxide SOI\",\"authors\":\"K. Watabe, H. Akiyama, T. Terashima, S. Nobuto, M. Yamawaki, T. Hirao\",\"doi\":\"10.1109/ISPSD.1996.509469\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have demonstrated that the developed process has a breakdown voltage of higher than 600 V with use of thick buried-oxide and thin SOI. From both experiments and simulations, the cylindrical structure in the LIGBTs shows the best performance; it improves the latch-up tolerance without the increase of on-state voltage. Moreover, the process we have developed is completely compatible with an existing 5 V, 0.8 /spl mu/m CMOS process.\",\"PeriodicalId\":377997,\"journal\":{\"name\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1996.509469\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

我们已经证明，在使用厚埋氧化物和薄SOI的情况下，所开发的工艺击穿电压高于600 V。实验和仿真结果表明，采用圆柱形结构的光源性能最好;在不增加导通电压的情况下，提高了锁存容限。此外，我们开发的工艺与现有的5 V, 0.8 /spl mu/m CMOS工艺完全兼容。

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A 0.8 /spl mu/m high voltage IC using newly designed 600 V lateral IGBT on thick buried-oxide SOI

We have demonstrated that the developed process has a breakdown voltage of higher than 600 V with use of thick buried-oxide and thin SOI. From both experiments and simulations, the cylindrical structure in the LIGBTs shows the best performance; it improves the latch-up tolerance without the increase of on-state voltage. Moreover, the process we have developed is completely compatible with an existing 5 V, 0.8 /spl mu/m CMOS process.

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8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

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