功率mesfet中的三端击穿效应

Proceedings of 1994 IEEE GaAs IC Symposium Pub Date : 1994-10-16 DOI:10.1109/GAAS.1994.636979

C. Hanson, H. Fu, M. Golio

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引用次数: 2

摘要

表征数据，理论发展，设计和可靠性的影响三端击穿报告。经验表明，表面状态在击穿电压机制中起着重要作用。结果表明，电荷捕获现象可以支配击穿电压的温度系数，使得对二极管特性的类比无效。

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Three-terminal breakdown effects in power MESFETs

Characterization data, theoretical developments, and the design and reliability impact of three-terminal breakdown is reported. Surface states are shown empirically to play a significant role in breakdown voltage mechanisms. It is illustrated that charge trapping phenomena can dominate the temperature coefficient of the breakdown voltage making analogies to diode characteristics invalid.

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Proceedings of 1994 IEEE GaAs IC Symposium

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