{"title":"基于x参数的倍频器设计","authors":"Jialin Cai, T. Brazil","doi":"10.23919/EUMC.2012.6459154","DOIUrl":null,"url":null,"abstract":"As a kind of superset of S-parameters, X-parameters are becoming increasingly popular in non-linear device simulation and measurement. Due to their good accuracy and convenient extraction procedures, X-parameter-based transistor device models have so far been mainly used in power amplifiers design. They have been limited to this kind of design up to now because the X-parameter models extracted are only suitable for fundamental frequency circuit design. In this paper, a new extraction method is described to allow the extracted model to be used to designing a frequency doubler, and verification through simulation results is presented.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"X-parameter-based frequency doubler design\",\"authors\":\"Jialin Cai, T. Brazil\",\"doi\":\"10.23919/EUMC.2012.6459154\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As a kind of superset of S-parameters, X-parameters are becoming increasingly popular in non-linear device simulation and measurement. Due to their good accuracy and convenient extraction procedures, X-parameter-based transistor device models have so far been mainly used in power amplifiers design. They have been limited to this kind of design up to now because the X-parameter models extracted are only suitable for fundamental frequency circuit design. In this paper, a new extraction method is described to allow the extracted model to be used to designing a frequency doubler, and verification through simulation results is presented.\",\"PeriodicalId\":243164,\"journal\":{\"name\":\"2012 7th European Microwave Integrated Circuit Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 7th European Microwave Integrated Circuit Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EUMC.2012.6459154\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 7th European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMC.2012.6459154","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
As a kind of superset of S-parameters, X-parameters are becoming increasingly popular in non-linear device simulation and measurement. Due to their good accuracy and convenient extraction procedures, X-parameter-based transistor device models have so far been mainly used in power amplifiers design. They have been limited to this kind of design up to now because the X-parameter models extracted are only suitable for fundamental frequency circuit design. In this paper, a new extraction method is described to allow the extracted model to be used to designing a frequency doubler, and verification through simulation results is presented.