闪存隧道氧化物质量的新型蛛网测试结构和表征方法

Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. Pub Date : 2002-04-08 DOI:10.1109/ICMTS.2002.1193185

T. Fan, T. Lu, S. Pan

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引用次数: 0

摘要

隧道氧化物质量是闪存发展的关键参数。高质量的隧道氧化物将带来良好的电池续航特性。然而，传统的隧道氧化物表征通常基于具有高片阻浮动多晶硅栅极的大面积电容器测试结构，从而获得过高估计的氧化物质量。在这项研究中，我们设计了一种新的测试结构和一种新的表征方法来测量隧道氧化。结果表明，该方法可获得更准确、可靠的隧道氧化寿命预测结果。此外，该测量与闪存持久性能相关。

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New spider-webs test structure and characterization methodology for flash memory tunnel oxide quality

Tunnel oxide quality is a key parameter during flash memory development. A high quality tunnel oxide will result in good cell endurance characteristics. However, the conventional tunnel oxide characterization is usually based on a large area capacitor test structure with a high sheet resistance floating poly-silicon gate, and, as a result, an over-estimated oxide quality is obtained. In this study, we design a new test structure and a new characterization methodology for tunnel oxide measurement. It is found that more accurate and reliable tunnel oxide lifetime prediction can be obtained with this new approach. Besides, this measurement is correlated to flash memory endurance performance.

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Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.

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