{"title":"单模工作的低阈值多波长垂直腔激光阵列","authors":"W. Yuen, G.S. Li, C. Chang-Hasnain","doi":"10.1109/LEOS.1996.565169","DOIUrl":null,"url":null,"abstract":"Summary form only given. To summarize, multiple-wavelength InGaAs DBR QW VCSEL arrays with low threshold (420 /spl mu/A) and wide wavelength span (44.8nm) are achieved by using improved p-mirror design and AlAs wet oxidation. Through the device size control and less heat dissipation from the low-voltage p-DBR laser, single-mode operation is also obtained over a 20.8nm span.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low-threshold multiple-wavelength vertical-cavity laser arrays with single-mode operation\",\"authors\":\"W. Yuen, G.S. Li, C. Chang-Hasnain\",\"doi\":\"10.1109/LEOS.1996.565169\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. To summarize, multiple-wavelength InGaAs DBR QW VCSEL arrays with low threshold (420 /spl mu/A) and wide wavelength span (44.8nm) are achieved by using improved p-mirror design and AlAs wet oxidation. Through the device size control and less heat dissipation from the low-voltage p-DBR laser, single-mode operation is also obtained over a 20.8nm span.\",\"PeriodicalId\":332726,\"journal\":{\"name\":\"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOS.1996.565169\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.1996.565169","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low-threshold multiple-wavelength vertical-cavity laser arrays with single-mode operation
Summary form only given. To summarize, multiple-wavelength InGaAs DBR QW VCSEL arrays with low threshold (420 /spl mu/A) and wide wavelength span (44.8nm) are achieved by using improved p-mirror design and AlAs wet oxidation. Through the device size control and less heat dissipation from the low-voltage p-DBR laser, single-mode operation is also obtained over a 20.8nm span.