M. Meyyappan, G. Andrews, B. J. Morrison, J. P. Kreskovsky, J.P. Grubin, H. Grubin
{"title":"用于高频应用的InP/InGaAs双异质结构双极晶体管分析","authors":"M. Meyyappan, G. Andrews, B. J. Morrison, J. P. Kreskovsky, J.P. Grubin, H. Grubin","doi":"10.1109/ICIPRM.1990.203033","DOIUrl":null,"url":null,"abstract":"The results of a two-dimensional simulation of an InP/InGaAs double heterostructure bipolar transistor are discussed. High-frequency performance is evaluated from transient solutions to the governing equations. The computed f/sub max/ is found to be larger than twice f/sub I/ over a wide range of collector current; values of f/sub max/ as high as 190 GHz have been computed for unoptimized structures. Proper doping and compositional grading in the base and collector layers are shown to reduce the problem of the conduction band spike at high collector current densities.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Analysis of InP/InGaAs double heterostructure bipolar transistors for high frequency applications\",\"authors\":\"M. Meyyappan, G. Andrews, B. J. Morrison, J. P. Kreskovsky, J.P. Grubin, H. Grubin\",\"doi\":\"10.1109/ICIPRM.1990.203033\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The results of a two-dimensional simulation of an InP/InGaAs double heterostructure bipolar transistor are discussed. High-frequency performance is evaluated from transient solutions to the governing equations. The computed f/sub max/ is found to be larger than twice f/sub I/ over a wide range of collector current; values of f/sub max/ as high as 190 GHz have been computed for unoptimized structures. Proper doping and compositional grading in the base and collector layers are shown to reduce the problem of the conduction band spike at high collector current densities.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.203033\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203033","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of InP/InGaAs double heterostructure bipolar transistors for high frequency applications
The results of a two-dimensional simulation of an InP/InGaAs double heterostructure bipolar transistor are discussed. High-frequency performance is evaluated from transient solutions to the governing equations. The computed f/sub max/ is found to be larger than twice f/sub I/ over a wide range of collector current; values of f/sub max/ as high as 190 GHz have been computed for unoptimized structures. Proper doping and compositional grading in the base and collector layers are shown to reduce the problem of the conduction band spike at high collector current densities.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
