Mg2Si在Al-Si-Mg合金无压渗腐蚀行为中的作用

R. Escalera-Lozan, M. Pech-Canul, M. Pech-Canul, M. Montoya-Dávila, A. Uribe-Salas
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引用次数: 19

摘要

采用4种Si/Mg摩尔比(A1-0.12、A2-0.49、A3-0.89、A4-1.05)不同的实验铝合金,在中性充气0.1M NaCl溶液中,研究了Mg2Si对Al-Si-Mg铝合金电化学行为的影响。据此测量了开路腐蚀电位(Eoc)和极化电阻(Rp)。结果表明,Si/Mg摩尔比的增加增加了Mg2Si金属间相的存在。在中性充气氯化物溶液浸泡试验中,Mg2Si金属间化合物的阳极活性迅速下降,表明其开路电位快速升高。浸泡7天后,A3和A4合金的Rp值(分别为21和26 Kcm 2)高于A1和A2合金的Rp值(分别为5和10 Kcm 2),表明A3和A4合金在含Cl环境中具有更强的耐腐蚀性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The Role of Mg2Si in the Corrosion Behavior of Al-Si-Mg Alloys for Pressureless Infiltration
The role of Mg2Si in the electrochemical behavior of Al-Si-Mg aluminum alloys has been studied using four experimental aluminum alloys with variations in the Si/Mg molar ratio (A1-0.12, A2-0.49, A3-0.89, A4-1.05), in neutral aerated 0.1M NaCl solutions. Accordingly, the corrosion potential in open circuit (Eoc) and polarization resistance (Rp) were measured. Results show that the augment in Si/Mg molar ratio increases the presence of Mg2Si intermetallic phase. During immersion tests in neutral aerated chloride solutions the anodic activity of the Mg2Si intermetallic decreased rapidly, as indicated by a fast ennoblement of open circuit potential. After the immersion period (7 days), higher Rp values for alloys A3 and A4 (21 and 26 Kcm 2 , respectively) as compared to those for alloys A1 and A2 (5 and 10 Kcm 2 , respectively), suggest a greater corrosion resistance in Cl - containing environments for alloys A3 and A4.
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