65nm CMOS的5G收发器矢量调制器

2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus) Pub Date : 2020-01-01 DOI:10.1109/EIConRus49466.2020.9039024

M. A. Ivanov, Anastasiya A. Podyacheva, I. Rumyancev

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引用次数: 8

摘要

本文给出了一种基于标准65nm CMOS技术的无电感矢量调制器的仿真结果。所设计的调制器基于矢量和移相器，对于5位振幅分辨率和6位相位分辨率，该调制器在4- 6ghz频段的幅值和相位误差分别为0.2 dB和1.0°。输入CP1dB约为-7.8 dBm，功耗为31 mW, 4.9 GHz时最大增益为1.9 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Vector Modulator for 5G Transceivers in 65 nm CMOS

This paper presents simulation results of an inductorless vector modulator in a standard 65 nm CMOS technology. The designed modulator is based on a vector-sum phase shifter and for five bit amplitude resolution and six bit phase resolution demonstrates 0.2 dB and 1.0 deg. RMS amplitude and RMS phase error in 4-6 GHz band. Input CP1dB is about –7.8 dBm with power consumption of 31 mW and maximum gain of 1.9 dB at 4.9 GHz.

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2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)

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