x波段GaN SPDT MMIC,线性功率处理超过25瓦

J. Janssen, M. van Heijningen, K. Hilton, J. O. Maclean, D. Wallis, J. Powell, M. Uren, T. Martin, F. V. van Vliet
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引用次数: 24

摘要

单极双掷开关是相控阵雷达收发模块中越来越重要的器件。SPDT开关必须能够处理高功率放大器的输出功率,并且必须提供足够的隔离,以在收发模块发射时保护接收链中的低噪声放大器。因此氮化镓技术成为大功率SPDT开关设计的关键技术。该技术在微波频率上表现出良好的性能,能够处理高功率。设计、测量和评估了一种线性功率处理超过25 W的x波段SPDT开关。该电路是在QinetiQ建立的共面波导AlGaN/GaN技术中设计的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
X-Band GaN SPDT MMIC with over 25 Watt Linear Power Handling
Single pole double throw (SPDT) switches are becoming more and more key components in phased-array radar transmit/receive modules. An SPDT switch must be able to handle the output power of a high power amplifier and must provide enough isolation to protect the low noise amplifier in the receive chain when the T/R module is transmitting. Therefore gallium nitride technology seems to become a key technology for high power SPDT switch design. The technology shows good performance on microwave frequencies and is able to handle high power. An X-band SPDT switch, with a linear power handling of over 25 W, has been designed, measured and evaluated. The circuit is designed in the coplanar waveguide AlGaN/GaN technology established at QinetiQ.
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