{"title":"一种采用电容表面的低轮廓宽带吸收器","authors":"Yuting Zhao, Yingsong Li, X. Liu","doi":"10.1109/iWEM49354.2020.9237408","DOIUrl":null,"url":null,"abstract":"In this paper, a single-layer wideband absorber with wide angular coverage is presented. The resistive surface is realized by a periodic array of I-shaped capacitive patterns with chip resistors. By introducing the capacitive patterns, the distance between metal ground and resistive surface with air space is reduced to 1/5 λ @10 GHz. A 10-dB absorption bandwidth from 5.5 GHz to 14.5 GHz has been observed in simulation under normal incidence of TE polarization. This structure also exhibits an angular stability up to 30° with a wide absorption band of at least 90% absorptivity from 4.8 GHz to 14.5 GHz. The fabricated design shows good agreement with the simulation.","PeriodicalId":201518,"journal":{"name":"2020 International Workshop on Electromagnetics: Applications and Student Innovation Competition (iWEM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A Low-Profile Wideband Absorber Using Capacitive Surface\",\"authors\":\"Yuting Zhao, Yingsong Li, X. Liu\",\"doi\":\"10.1109/iWEM49354.2020.9237408\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a single-layer wideband absorber with wide angular coverage is presented. The resistive surface is realized by a periodic array of I-shaped capacitive patterns with chip resistors. By introducing the capacitive patterns, the distance between metal ground and resistive surface with air space is reduced to 1/5 λ @10 GHz. A 10-dB absorption bandwidth from 5.5 GHz to 14.5 GHz has been observed in simulation under normal incidence of TE polarization. This structure also exhibits an angular stability up to 30° with a wide absorption band of at least 90% absorptivity from 4.8 GHz to 14.5 GHz. The fabricated design shows good agreement with the simulation.\",\"PeriodicalId\":201518,\"journal\":{\"name\":\"2020 International Workshop on Electromagnetics: Applications and Student Innovation Competition (iWEM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Workshop on Electromagnetics: Applications and Student Innovation Competition (iWEM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/iWEM49354.2020.9237408\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Workshop on Electromagnetics: Applications and Student Innovation Competition (iWEM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/iWEM49354.2020.9237408","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Low-Profile Wideband Absorber Using Capacitive Surface
In this paper, a single-layer wideband absorber with wide angular coverage is presented. The resistive surface is realized by a periodic array of I-shaped capacitive patterns with chip resistors. By introducing the capacitive patterns, the distance between metal ground and resistive surface with air space is reduced to 1/5 λ @10 GHz. A 10-dB absorption bandwidth from 5.5 GHz to 14.5 GHz has been observed in simulation under normal incidence of TE polarization. This structure also exhibits an angular stability up to 30° with a wide absorption band of at least 90% absorptivity from 4.8 GHz to 14.5 GHz. The fabricated design shows good agreement with the simulation.