C. Tran, R. Masut, J. Brebner, M. Jouanne, R. Leonelli
{"title":"InP和InAs/InP异质结构的原子层外延","authors":"C. Tran, R. Masut, J. Brebner, M. Jouanne, R. Leonelli","doi":"10.1109/ICIPRM.1993.380697","DOIUrl":null,"url":null,"abstract":"The samples used for this study were InAs/InP strained single quantum wells and strained superlattices (SLS) grown by atomic layer epitaxy (ALE). The growth of InAs on InP is strongly influenced by the large lattice mismatch (3.22%). High resolution X-ray diffraction (HRXRD) was carried out. HRXRD can be used to quickly and precisely evaluate the ALE self-limiting growth rate of both InP and InAs. Using interference of X-ray wave fields in a ALE grown InP with an InAs marker layer the authors have accurately determined the growth per cycle. Raman spectra of AL grown InAs/InP SLSs show clearly the longitudinal acoustical folded modes and the longitudinal optic confined modes for both InAs and InP layers. The results indicate that despite the 3.2% lattice mismatch, ALE is a powerful method for fabricating highly strained InAs/InP structures with atomically controlled heterointerfaces.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Atomic layer epitaxy of InP and InAs/InP heterostructures\",\"authors\":\"C. Tran, R. Masut, J. Brebner, M. Jouanne, R. Leonelli\",\"doi\":\"10.1109/ICIPRM.1993.380697\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The samples used for this study were InAs/InP strained single quantum wells and strained superlattices (SLS) grown by atomic layer epitaxy (ALE). The growth of InAs on InP is strongly influenced by the large lattice mismatch (3.22%). High resolution X-ray diffraction (HRXRD) was carried out. HRXRD can be used to quickly and precisely evaluate the ALE self-limiting growth rate of both InP and InAs. Using interference of X-ray wave fields in a ALE grown InP with an InAs marker layer the authors have accurately determined the growth per cycle. Raman spectra of AL grown InAs/InP SLSs show clearly the longitudinal acoustical folded modes and the longitudinal optic confined modes for both InAs and InP layers. The results indicate that despite the 3.2% lattice mismatch, ALE is a powerful method for fabricating highly strained InAs/InP structures with atomically controlled heterointerfaces.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380697\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380697","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Atomic layer epitaxy of InP and InAs/InP heterostructures
The samples used for this study were InAs/InP strained single quantum wells and strained superlattices (SLS) grown by atomic layer epitaxy (ALE). The growth of InAs on InP is strongly influenced by the large lattice mismatch (3.22%). High resolution X-ray diffraction (HRXRD) was carried out. HRXRD can be used to quickly and precisely evaluate the ALE self-limiting growth rate of both InP and InAs. Using interference of X-ray wave fields in a ALE grown InP with an InAs marker layer the authors have accurately determined the growth per cycle. Raman spectra of AL grown InAs/InP SLSs show clearly the longitudinal acoustical folded modes and the longitudinal optic confined modes for both InAs and InP layers. The results indicate that despite the 3.2% lattice mismatch, ALE is a powerful method for fabricating highly strained InAs/InP structures with atomically controlled heterointerfaces.<>
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