进展-190°C到+500°C耐用SiC JFET ic从微芯片到大规模集成电路

2020 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2020-12-12 DOI:10.1109/IEDM13553.2020.9371953

P. Neudeck, D. Spry, M. Krasowski, L. Chen, N. Prokop, L. Greer, C. Chang

{"title":"进展-190°C到+500°C耐用SiC JFET ic从微芯片到大规模集成电路","authors":"P. Neudeck, D. Spry, M. Krasowski, L. Chen, N. Prokop, L. Greer, C. Chang","doi":"10.1109/IEDM13553.2020.9371953","DOIUrl":null,"url":null,"abstract":"This invited paper describes prototype SiC JFET integrated circuit (IC) and packaging technology that has produced arguably the most harsh-environment durable electronics ever demonstrated. Prototype medium-scale integration (MSI) ICs fabricated by NASA Glenn Research Center have successfully operated for over 1 year in 500 °C air-ambient, over 60 days in 460 °C and 9.3 MPa pressure caustic Venus surface environment test chamber, from -190 °C to +812 °C, and radiation exposure through 7 MRad(Si) total ionizing dose and 86 MeV-cm2/mg heavy ion strikes. Recent on-going work focused on upscaling this “go anywhere” IC capability from MSI to large-scale integration (LSI) prototype via benchmark memory ICs is described.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Progressing -190 °C to +500 °C Durable SiC JFET ICs From MSI to LSI\",\"authors\":\"P. Neudeck, D. Spry, M. Krasowski, L. Chen, N. Prokop, L. Greer, C. Chang\",\"doi\":\"10.1109/IEDM13553.2020.9371953\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This invited paper describes prototype SiC JFET integrated circuit (IC) and packaging technology that has produced arguably the most harsh-environment durable electronics ever demonstrated. Prototype medium-scale integration (MSI) ICs fabricated by NASA Glenn Research Center have successfully operated for over 1 year in 500 °C air-ambient, over 60 days in 460 °C and 9.3 MPa pressure caustic Venus surface environment test chamber, from -190 °C to +812 °C, and radiation exposure through 7 MRad(Si) total ionizing dose and 86 MeV-cm2/mg heavy ion strikes. Recent on-going work focused on upscaling this “go anywhere” IC capability from MSI to large-scale integration (LSI) prototype via benchmark memory ICs is described.\",\"PeriodicalId\":415186,\"journal\":{\"name\":\"2020 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM13553.2020.9371953\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM13553.2020.9371953","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

这篇特邀论文描述了原型SiC JFET集成电路(IC)和封装技术，这些技术已经产生了有史以来最恶劣环境下的耐用电子产品。美国宇航局格伦研究中心制造的原型中型集成电路(MSI)在500°C空气环境中成功运行了1年多，在460°C和9.3 MPa压力的腐蚀性金星表面环境测试室中，从-190°C到+812°C，通过7 MRad(Si)总电离剂量和86 MeV-cm2/mg重离子撞击，成功运行了60多天。最近正在进行的工作重点是通过基准内存IC将这种“随处可见”的集成电路能力从MSI提升到大规模集成电路(LSI)原型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Progressing -190 °C to +500 °C Durable SiC JFET ICs From MSI to LSI

This invited paper describes prototype SiC JFET integrated circuit (IC) and packaging technology that has produced arguably the most harsh-environment durable electronics ever demonstrated. Prototype medium-scale integration (MSI) ICs fabricated by NASA Glenn Research Center have successfully operated for over 1 year in 500 °C air-ambient, over 60 days in 460 °C and 9.3 MPa pressure caustic Venus surface environment test chamber, from -190 °C to +812 °C, and radiation exposure through 7 MRad(Si) total ionizing dose and 86 MeV-cm2/mg heavy ion strikes. Recent on-going work focused on upscaling this “go anywhere” IC capability from MSI to large-scale integration (LSI) prototype via benchmark memory ICs is described.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2020 IEEE International Electron Devices Meeting (IEDM)

自引率

0.00%

发文量