HVM条件下高达12Gbps的高速IO互连阻抗优化

Xinjun Zhang, C. Ye, M. Wei, Weifeng Shu, X. Ye
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引用次数: 1

摘要

差分阻抗优化是高速IO设计的关键,几十年来引起了人们的广泛关注。本文主要研究10Gbps及以上通用服务器设计的阻抗优化,并以大批量生产条件下的SAS3(串行连接SCSI Gen3)为例。本研究首先对三根级联传输线组成的双端口网络进行理论分析,证明存在一个最优的中间段特性阻抗值,使整个双端口网络反射最小,传输最佳。在SAS3阻抗优化研究中,考虑了每个设计变量的统计分布,以解决HVM的考虑。结果清楚地表明,对于给定的阻抗设计范围从85Ω到100Ω,基板和背板的阻抗越低,接收器的眼界就越大。换句话说,即使电缆、连接器和SAS3硬盘驱动器(hdd)按照SAS3规范100Ω设计,在基板和背板上的85Ω设计在性能上优于100Ω。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Interconnect impedance optimization for high speed IO up to 12Gbps under HVM condition
Differential impedance optimization is critical for high-speed IO design and has attracted lot of interests for decades. This paper focuses on impedance optimization on a general purpose server design for 10Gbps and above and use SAS3 (Serial Attached SCSI Gen3) as example under HVM (high volume manufacturing) condition. The study starts with theoretical analysis on a two-port network of three cascaded transmission lines to prove that there is an optimal characteristic impedance value of the middle section which can bring the lowest reflection and best transmission to the entire two-port network. In the SAS3 impedance optimization study, statistical distribution for each design variable is considered to address the HVM consideration. The result clearly shows that lower the impedance of baseboard and backplane yields better eye opening at the receiver for the given impedance design range from 85Ω to 100Ω. In other words, 85Ω design on baseboard and backplane is better in performance than 100Ω even if cables, connectors and SAS3 hard disk drives (HDDs) are designed at 100Ω per SAS3 specification.
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