misi - il硅太阳电池中Al/SiO/sub x/ p-Si接触面的表征与优化

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI:10.1109/PVSC.1997.653929

B. Kuhlmann, A. Aberle, R. Hezel, G. Heiser

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引用次数: 0

摘要

Al/SiO/sub x//p-Si隧道触点是金属-绝缘体-半导体反转层(MIS- il)硅太阳电池的重要组成部分。我们通过实验确定了在ISFH制造的misi - il硅太阳能电池中MIS触点的复合特性(饱和电流密度J/sub 0/和理想因子n)。基于这些测量，通过二维数值模拟，可以解决MIS接触对单太阳照射的MIS- il太阳能电池总复合损失的贡献。此外，还进行了二维数值优化研究，确定了先进MIS- il硅太阳能电池MIS接触指的最佳宽度。

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Characterization and optimization of the Al/SiO/sub x//p-Si MIS contact in MIS-IL silicon solar cells

The Al/SiO/sub x//p-Si MIS tunnel contact is an essential part of metal-insulator-semiconductor inversion-layer (MIS-IL) silicon solar cells. We experimentally determined the recombination properties (saturation current density J/sub 0/ and ideality factor n) of the MIS contact in MIS-IL silicon solar cells fabricated at ISFH. Based on these measurements, it has been possible to resolve the contribution of the MIS contact to the total recombination losses in 1-sun illuminated MIS-IL solar cells by means of 2D numerical modeling. Furthermore, a 2D numerical optimization study is performed where the optimum width of the MIS contact fingers of advanced MIS-IL silicon solar cells is determined.

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Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997

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