可靠性增强的RF MEMS开关

Vishal Kumar, S. Koul, A. Basu
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引用次数: 2

摘要

本文提出了一种提高可靠性的新型射频MEMS并联开关。在高电阻硅衬底上制造的ka波段并联开关实现了三层夹心(绝缘体-金属-绝缘体)膜的新概念,其驱动电压较低,为10伏。该开关采用静电驱动机构驱动,在40 GHz时测量到的插入损耗和隔离度分别为1.94 dB和18 dB。该开关的开关速度为$76 \ \mu\text{sec}$,可运行10亿次而性能不下降。该开关为低压通信系统应用提供了一种解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
RF MEMS Switch with Enhanced Reliability
In this paper, a novel RF MEMS shunt switch with enhanced reliability is presented. A Ka-band shunt switch which is fabricated on a high resistivity silicon substrate implements a novel concept of tri-layer sandwich (insulator-Metal-insulator) membrane which results a lower actuation voltage of 10 Volt. The switch is actuated using electrostatic actuation mechanism and has the measured insertion loss and isolation of 1.94 dB and 18 dB at 40 GHz respectively. The switching speed of the switch is $76 \ \mu\text{sec}$ and works well up to one billion cycles of operation without deterioration in performance. The switch provides a solution for low voltage communication system applications.
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