与标准封装级测试相比，采用多加热方法对通孔/线结构进行晶圆级电迁移测试

Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003 Pub Date : 2003-07-07 DOI:10.1109/IPFA.2003.1222742

H. Yap, K. Yap, Y. Tan, K. Lo

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引用次数: 1

摘要

在这项研究中，我们提供了另一种晶圆级电磁技术的数据，即对通孔链结构的多热电迁移测试。我们表明，传统封装水平和多热通过测试之间存在良好的相关性。我们也提出实际案例来说明多热管测试是过程评估和监控的有效工具。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Wafer level electromigration testing on via/line structure with a poly-heated method in comparison to standard package level tests

In this study, we present data from alternative wafer level EM technique, poly-heated electromigration test on via chain structure. We show that there is a good correlation between conventional package level and poly-heated via test. We also present real case studies to illustrate poly-heated via test is an effective tool for process evaluation and monitoring.

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Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003

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