GaAs mesfet中扭结相关背闸效应的二维模拟

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496350

K. Horio, K. Usami

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引用次数: 1

摘要

在考虑载流子和衬底深层供体EL2的冲击电离的情况下，对GaAs mesfet中的回程效应进行了二维模拟。再现了扭结相关的反向效应，这与最近的实验在质量上是一致的。其机理是通过捕获冲击电离产生的空穴并流入衬底而改变了EL2的性质。

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Two-dimensional simulation of kink-related backgating effect in GaAs MESFETs

2-D simulation of backgating effect in GaAs MESFETs is made in which impact ionization of carriers and deep donors "EL2" in the substrate are considered. The kink-related backgating is reproduced, which is qualitatively consistent with recent experiments. The mechanism is attributed to the change of EL2's nature by capturing holes which are generated by impact ionization and flow into the substrate.

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1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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