SiC mosfet重复短路稳健性分析热模型的建立

2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe) Pub Date : 2020-09-01 DOI:10.23919/EPE20ECCEEurope43536.2020.9215664

M. Pulvirenti, D. Cavallaro, N. Bentivegna, S. Cascino, E. Zanetti, M. Saggio

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引用次数: 0

摘要

本文的目的是分析SiC mosfet在重复短路测试中的性能。特别是，该活动的重点是通过在不同条件下进行的专用实验室测量来深入评估短路动态，并通过由有限元方法(FEA)和故障分析(FA)开发的健壮物理模型进行比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Thermal Model Development for SiC MOSFETs Robustness Analysis under Repetitive Short Circuit Tests

The aim of this paper is to analyze the SiC MOSFETs behavior under repetitive short circuit tests. In particular, the activity is focused on a deep evaluation of short circuit dynamic by dedicated laboratory measurements conducted at different conditions supported and compared by means of a robust physical model developed by Finite Element Approach (FEA) and Failure Analysis (FA).

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来源期刊

2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

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