B. Adelseck, A. Colquhoun, J. Dieudonné, G. Ebert, J. Selders, K. Schmegner, W. Schwab
{"title":"FET兼容技术的单片60 GHz二极管混频器","authors":"B. Adelseck, A. Colquhoun, J. Dieudonné, G. Ebert, J. Selders, K. Schmegner, W. Schwab","doi":"10.1109/MCS.1989.37270","DOIUrl":null,"url":null,"abstract":"A method of simultaneously fabricating MESFETs with a maximum frequency of oscillation (f/sub max/) of 70 GHz and Schottky diodes with a gain-bandwidth product (f/sub T/) of approximately=2300 GHz to produce a 60-GHz mixer is given. A deep selective n/sup +/ implantation for a buried n/sup +/ zone under the mixer diode was used. Metalorganic chemical vapor deposition (MOCVD) was used for the growth of the active n layer and an n/sup +/ surface contact layer. The MESFETs and the diodes were both fabricated with a recessed Schottky contact structure using Ti-Pt-Au metallization. Arrays of 30 different diodes and 55 different MESFETs were fabricated to study the process technology and to get optimum devices for a receiver chip containing a diode balanced mixer plus a low-noise intermediate-frequency (IF) amplifier. The conversion loss and noise figures of the diodes were measured and compared with those obtained from computer simulations. Both large- and small-signal analysis are included. The 60-GHz balanced mixer chip shows a conversion loss of 6.0 dB and a double-sideband noise figure of 3.3 dB.<<ETX>>","PeriodicalId":377911,"journal":{"name":"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A monolithic 60 GHz diode mixer in FET compatible technology\",\"authors\":\"B. Adelseck, A. Colquhoun, J. Dieudonné, G. Ebert, J. Selders, K. Schmegner, W. Schwab\",\"doi\":\"10.1109/MCS.1989.37270\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A method of simultaneously fabricating MESFETs with a maximum frequency of oscillation (f/sub max/) of 70 GHz and Schottky diodes with a gain-bandwidth product (f/sub T/) of approximately=2300 GHz to produce a 60-GHz mixer is given. A deep selective n/sup +/ implantation for a buried n/sup +/ zone under the mixer diode was used. Metalorganic chemical vapor deposition (MOCVD) was used for the growth of the active n layer and an n/sup +/ surface contact layer. The MESFETs and the diodes were both fabricated with a recessed Schottky contact structure using Ti-Pt-Au metallization. Arrays of 30 different diodes and 55 different MESFETs were fabricated to study the process technology and to get optimum devices for a receiver chip containing a diode balanced mixer plus a low-noise intermediate-frequency (IF) amplifier. The conversion loss and noise figures of the diodes were measured and compared with those obtained from computer simulations. Both large- and small-signal analysis are included. The 60-GHz balanced mixer chip shows a conversion loss of 6.0 dB and a double-sideband noise figure of 3.3 dB.<<ETX>>\",\"PeriodicalId\":377911,\"journal\":{\"name\":\"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1989.37270\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1989.37270","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A monolithic 60 GHz diode mixer in FET compatible technology
A method of simultaneously fabricating MESFETs with a maximum frequency of oscillation (f/sub max/) of 70 GHz and Schottky diodes with a gain-bandwidth product (f/sub T/) of approximately=2300 GHz to produce a 60-GHz mixer is given. A deep selective n/sup +/ implantation for a buried n/sup +/ zone under the mixer diode was used. Metalorganic chemical vapor deposition (MOCVD) was used for the growth of the active n layer and an n/sup +/ surface contact layer. The MESFETs and the diodes were both fabricated with a recessed Schottky contact structure using Ti-Pt-Au metallization. Arrays of 30 different diodes and 55 different MESFETs were fabricated to study the process technology and to get optimum devices for a receiver chip containing a diode balanced mixer plus a low-noise intermediate-frequency (IF) amplifier. The conversion loss and noise figures of the diodes were measured and compared with those obtained from computer simulations. Both large- and small-signal analysis are included. The 60-GHz balanced mixer chip shows a conversion loss of 6.0 dB and a double-sideband noise figure of 3.3 dB.<>
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