氮化镓和硅基4.5 kw单相逆变器的成本比较

Zhe Yang, Jianliang Chen, P. Williford, Fred Wang
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引用次数: 1

摘要

本文介绍了基于氮化镓(GaN)和基于硅(Si)的4.5 kw单相逆变器的设计和成本比较。为了公平比较,两种逆变器在与实际硅光伏逆变器相同的要求下进行了优化。组件的成本是基于组件的价格在高数量。研究表明,尽管基于gan的逆变器的有源器件和散热器的成本较高,但通过使用高6倍的开关频率,总体成本可以比基于si的逆变器低19美元(10%),这大大缩小了无源滤波器。建立了基于gan的原型并进行了测试以验证设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Cost Comparison Between GaN-based and Si-based 4.5-kW Single-phase Inverters
This paper presents the converter design and cost comparison between Gallium Nitride (GaN)-based and Silicon (Si)-based 4.5-kW single-phase inverters. For fair comparison, both inverters are optimized under the same requirement as a practical Si PV inverter. The cost of the components are based on the component prices at high quantity. The study shows that although the cost of active devices and heatsink is higher for GaN-based inverter, the overall cost can be $ 19 (10%) lower than Si-based counterpart by using switching frequency 6 times higher, which drastically shrinks the passive filters. A GaN-based prototype is built and tested to verify the design.
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