{"title":"一种增加半导体器件有效频率范围的技术","authors":"V. Temple, M. Adler, P. V. Gray","doi":"10.1109/PESC.1979.7081055","DOIUrl":null,"url":null,"abstract":"The trade-off between forward voltage drop and device turn-off time can be significantly altered by the proper location of a narrow region of lower lifetime oriented perpendicular to the current flow. The proposed structure is discussed and calculations presented to illustrate this claim.","PeriodicalId":101593,"journal":{"name":"1979 IEEE Power Electronics Specialists Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A technique for increasing the useful frequency range of semiconductor devices\",\"authors\":\"V. Temple, M. Adler, P. V. Gray\",\"doi\":\"10.1109/PESC.1979.7081055\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The trade-off between forward voltage drop and device turn-off time can be significantly altered by the proper location of a narrow region of lower lifetime oriented perpendicular to the current flow. The proposed structure is discussed and calculations presented to illustrate this claim.\",\"PeriodicalId\":101593,\"journal\":{\"name\":\"1979 IEEE Power Electronics Specialists Conference\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1979 IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1979.7081055\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1979 IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1979.7081055","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A technique for increasing the useful frequency range of semiconductor devices
The trade-off between forward voltage drop and device turn-off time can be significantly altered by the proper location of a narrow region of lower lifetime oriented perpendicular to the current flow. The proposed structure is discussed and calculations presented to illustrate this claim.
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