基于温度的ReRAM记忆器件复位过渡新模型

2021 10th International Conference on Modern Circuits and Systems Technologies (MOCAST) Pub Date : 2021-07-05 DOI:10.1109/MOCAST52088.2021.9493413

M. M. A. Chawa, R. Tetzlaff, S. Stavrinides, Carol de Benito, R. Picos

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引用次数: 0

摘要

本文将电阻开关RAM (ReRAM)器件视为忆阻器，并引入磁通电荷域的忆阻器模型，而不是通常采用的电压电流域的忆阻器模型。我们在器件的高阻状态下采用了所提出的模型。我们用一个准静态热模型把忆阻器模型的参数与状态变量温度联系起来。用这个简单模型得到的结果与实验结果吻合得很好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A New Temperature-Based Model for the Reset Transition on ReRAM Memristive Devices

In this paper we consider Resistive switching RAM (ReRAM) devices as memristors and we introduce a memristor model in flux-charge domain rather than the usually prefered voltage-current one. We employ the proposed model during the high resistance state of the device. We relate the parameters of the memristor model with a state variable, the temperature, by using a quasi-static thermal model. The emerging results using this simple model show a very good agreement with the experimental ones, correspondingly.

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2021 10th International Conference on Modern Circuits and Systems Technologies (MOCAST)

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