{"title":"双各向同性基板屏蔽微带线的准静力分析","authors":"Ž. Mančić, V. Petrovic","doi":"10.1109/TELSKS.2013.6704430","DOIUrl":null,"url":null,"abstract":"The paper presents the calculation of the effective relative permittivity and the characteristic impedance of the shielded microstrip line with bi-isotropic dielectric substrate, and with the special kind of the bi-isotropic substrate - the Tellegen material. Calculation was performed using the strong formulation of the Finite Element method (FEM). Basis functions of the third order and rectangle mesh were applied.","PeriodicalId":144044,"journal":{"name":"2013 11th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services (TELSIKS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Quasi-static analysis of the shielded microstrip line with bi-isotropic substrate by the strong FEM formulation\",\"authors\":\"Ž. Mančić, V. Petrovic\",\"doi\":\"10.1109/TELSKS.2013.6704430\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents the calculation of the effective relative permittivity and the characteristic impedance of the shielded microstrip line with bi-isotropic dielectric substrate, and with the special kind of the bi-isotropic substrate - the Tellegen material. Calculation was performed using the strong formulation of the Finite Element method (FEM). Basis functions of the third order and rectangle mesh were applied.\",\"PeriodicalId\":144044,\"journal\":{\"name\":\"2013 11th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services (TELSIKS)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 11th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services (TELSIKS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TELSKS.2013.6704430\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 11th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services (TELSIKS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TELSKS.2013.6704430","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Quasi-static analysis of the shielded microstrip line with bi-isotropic substrate by the strong FEM formulation
The paper presents the calculation of the effective relative permittivity and the characteristic impedance of the shielded microstrip line with bi-isotropic dielectric substrate, and with the special kind of the bi-isotropic substrate - the Tellegen material. Calculation was performed using the strong formulation of the Finite Element method (FEM). Basis functions of the third order and rectangle mesh were applied.