非均匀电流注入对InGaN-GaN蓝绿发光二极管电致发光光谱的影响

I. Khmyrova, Yu. Kholopova, S. Larkin, V. Zemlyakov, B. Shevchenko, A. Tsatsul'nikov, S. Shapoval
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引用次数: 1

摘要

制备了具有空间非均匀注入电流的蓝绿InGaN/GaN发光二极管(led)并进行了测试。在较高的注入电流下,电致发光光谱宽,蓝、绿发射线峰强度相等,两者之间有浅波谷。el谱的这些特征被认为是由电极的网状图案引起的,因为它产生了空间上不均匀的电势,从而提供了沿量子阱平面注入电流的空间调制。后者不仅会导致产生光强度沿量子阱平面的空间不均匀性,而且由于量子阱中偏振场的屏蔽也会导致EL的位置相关蓝移。所观察到的现象可用于通过图案化电极控制双波长led的发光光谱。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of nonuniform current injection on electroluminescence spectra of InGaN-GaN blue-green light-emitting diode
Blue-green InGaN/GaN light-emitting diodes (LEDs) with spatially nonuniform current injection were fabricated and tested. Broad electroluminescence (EL) spectra with equal peak intensities of blue and green emission lines and shallow trough between them were observed at elevated injected current. These features of EL-spectrum are believed to be caused by the mesh-like patterning of the electrode as it creates spatially nonuniform electric potential which provides spatial modulation of the injected current along the QW-planes. The latter results not only in spatial nonuniformity of intensity of generated light along the QW-planes but due to screening of polarization field in the QWs causes also position-dependent blue shift of EL. The observed phenomenon can be used to control the EL spectra of dual-wavelength LEDs by the patterned electrodes.
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