Weak localization in p-type inversion channels on silicon

Experimental results on the magnetoresistance in p-type inversion channels on the [111] silicon surface are presented. Experiments were conducted at temperature of 4.2 /spl deg/K, magnetic field magnitudes of up to 3 Tesla and gate voltages on the MOS-structures generating hole concentration of /spl Gamma//sub p//spl cong/10/sup 13/ cm/sup -2/ in inversion channel. Having compared theory with the experimental results for B/sub /spl perp// we have obtained that (0.5+/spl beta/)/spl cong/0.501, L/sub /spl phi///spl cong/6.1/spl middot/10/sup -8/ m, L/sub /spl phi///sup *//spl cong/4.8/spl middot/10/sup -9/ m, /spl tau//sub /spl phi////spl tau//sub /spl phi///sup *//spl cong/80. In the case of B/sub /spl par// have obtained that up to B/sub /spl par//=2 T, /spl tau//sub /spl phi////spl tau//sub B/spl par//spl caron///spl ap/0.6/spl middot/B/sup 2/ and /spl tau//sub /spl phi///sup *///spl tau//sub B/spl par//spl caron///spl ap/20.