注液MOCVD制备si掺杂$\boldsymbol{\beta}-\mathbf{Ga}_{\boldsymbol{2}}\mathbf{O}_{\boldsymbol{3}}$的输运性质

F. Egyenes, F. Gucmann, E. Dobročka, M. Mikolasek, K. Hušeková, M. Ťapajna
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引用次数: 0

摘要

氧化镓属于宽禁带半导体材料,具有高功率和高电压性能。本文采用液体注入金属有机化学气相沉积法制备了$ si掺杂\ \ β - ga_2 O_3$薄膜。为了改善电子器件所需的输运性能,测试了不同的生长条件(沉积室中O_{2}$流动,液体前驱体中si含量,以及$Ga$前驱体的选择)。用x射线衍射法研究了薄膜的结构特性。对薄膜进行紫外-可见透射率和椭偏光学测量,分别确定薄膜的带隙能和带隙厚度。采用范德保法提取薄膜电阻率。讨论了生长过程中贫氧和富氧气氛对薄膜电阻率的影响,并指出了氧空位对薄膜电子输运的可能作用。最后,确定了适合电子器件制造的最佳生长条件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Transport properties of Si-doped $\boldsymbol{\beta}-\mathbf{Ga}_{\boldsymbol{2}}\mathbf{O}_{\boldsymbol{3}}$ grown by liquid-injection MOCVD
Gallium oxide belongs to wide bandgap semiconducting materials with high power and high voltage capabilities. In this work, $Si-doped \ \beta-Ga_2 O_3$ films were prepared using liquid injection metal organic chemical vapor deposition. Various growth conditions $(O_{2}$ flow in deposition chamber, Si-content in liquid precursor, and choice of $Ga$ precursor) were tested with an aim to improve transport properties needed for electronic devices. X-ray diffraction was applied to study structural properties of the films. Thin films underwent UV-VIS transmittance and ellipsometry optical measurements to determine thin films bandgap energies and thickness, respectively. Van der Pauw measurement was used to extract thin films resistivity. Influence of oxygen-poor and oxygen-rich atmosphere during the growth on films resistivity was discussed and indicated possible role of oxygen vacancies on the electron transport of the prepared films. Finally, optimal growth conditions suitable for electronic device manufacture were identified.
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