{"title":"具有浮栅的高性能AlGaN/GaN肖特基势垒二极管","authors":"Zhiqingg Zhou, Meihua Liu, Xinnan Lin","doi":"10.1109/ISNE.2019.8896374","DOIUrl":null,"url":null,"abstract":"In this paper, we report a high performance AlGaN/GaN Schottky barrier diodes (SBDs) with floating gate. We design a GaN SBDs with floating gate on Si substrate, fabricated in a 6-inch wafer process line. Compared with normal SBDs, the SBDs with floating gate presented almost 13% smaller turn-on voltage (VON); also, the floating gate cut down reverse current by 25%. This device structure can be widely used for GaN power devices on a large-size silicon substrate.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High Performance AlGaN/GaN Schottky Barrier Diodes with Floating Gate\",\"authors\":\"Zhiqingg Zhou, Meihua Liu, Xinnan Lin\",\"doi\":\"10.1109/ISNE.2019.8896374\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report a high performance AlGaN/GaN Schottky barrier diodes (SBDs) with floating gate. We design a GaN SBDs with floating gate on Si substrate, fabricated in a 6-inch wafer process line. Compared with normal SBDs, the SBDs with floating gate presented almost 13% smaller turn-on voltage (VON); also, the floating gate cut down reverse current by 25%. This device structure can be widely used for GaN power devices on a large-size silicon substrate.\",\"PeriodicalId\":405565,\"journal\":{\"name\":\"2019 8th International Symposium on Next Generation Electronics (ISNE)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 8th International Symposium on Next Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2019.8896374\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 8th International Symposium on Next Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2019.8896374","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Performance AlGaN/GaN Schottky Barrier Diodes with Floating Gate
In this paper, we report a high performance AlGaN/GaN Schottky barrier diodes (SBDs) with floating gate. We design a GaN SBDs with floating gate on Si substrate, fabricated in a 6-inch wafer process line. Compared with normal SBDs, the SBDs with floating gate presented almost 13% smaller turn-on voltage (VON); also, the floating gate cut down reverse current by 25%. This device structure can be widely used for GaN power devices on a large-size silicon substrate.
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