铜污染导致MOSFET特性和可靠性退化

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852755

M. Inohara, H. Sakurai, T. Yamaguchi, H. Tomita, T. Iijima, H. Oyamatsu, T. Nakayama, H. Yoshimura, Y. Toyoshima

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引用次数: 16

摘要

研究了铜污染对MOSFET电学特性和可靠性的影响，并考察了一些退化模式。栅极氧化硅中载流子陷阱位点的增加解释了降解的机理。通过对两种不同污染水平样品的比较，确定了器件区铜的允许污染水平。

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Copper contamination induced degradation of MOSFET characteristics and reliability

MOSFET electrical characteristics and reliability impact with copper contamination is examined and some degradation modes are inspected. The mechanism of degradation is explained by increase of carrier trap sites in gate silicon oxide. The permissive contamination level of copper in device region is indicated by comparison between two different contamination level samples.

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2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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